Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN

Remote plasma sources sustained in NF3 mixtures

Remote plasma sources (RPS) are being developed for low damage materials processing during semiconductor fabrication. Plasmas sustained in NF3 are often used as a source of F atoms. NF3 containing gas mixtures (e.g., NF3/O2, NF3/H2) provide the additional opportunity to produce and control desirable F atom containing reactive species. In this paper, results from computational investigations of ...

Insights to scaling remote plasma sources sustained in NF3 mixtures

Remote plasma sources (RPSs) are being developed for low damage materials processing during semiconductor fabrication. Plasmas sustained in NF3 are often used as a source of F atoms. NF3 containing gas mixtures such as NF3/O2 and NF3/H2 provide additional opportunities to produce and control desirable reactive species such as F and NO. In this paper, results from computational investigations of...

The Incorporation of In in GaAsN as a Means of N Fraction Calibration

InGaAsN and GaAsN epitaxial layers with similar nitrogen compositions in a sample were successfully grown on a GaAs (001) substrate by solid source molecular beam epitaxy. An electron cyclotron resonance nitrogen plasma source has been used to generate atomic nitrogen during the growth of the nitride layers. The indium composition changed from sample to sample to give compressive and tensile st...

Urea and ammonium nitrate as sources of N for wheat,sugarbeets and chickpeas in A 3-year crop rotation

nano-rods zno as an efficient catalyst for the synthesis of chromene phosphonates, direct amidation and formylation of amines

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